To address emerging custom circuit design challenges, Mountain View, Calif.-based EDA giant Synopsys Inc. today unveiled its anticipated next-generation transistor-level static timing analysis tool, ...

Thus the three basic bipolar transistor circuit configurations have equivalents with a FET; common-emitter becomes common-source, common-base becomes common-gate, and an emitter follower becomes a ...

The dense metallization required for backside power networks blocks traditional failure analysis techniques. As leading semiconductor companies prepare to deploy BPD in production, debug teams must ...

I would like to use an example of a 14nm FinFET process flow to identify important process parameters that drive fin top CD, which is a key metric for transistor performance. Figure 1 – FinFET Process ...

A technical paper titled “Analysis of Logic-in-Memory Full Adder Circuit With Floating Gate Field Effect Transistor (FGFET)” was published by researchers at Konkuk University, Korea National ...

As the MOSbius contains only transistors, circuit elements like resistors and capacitors are wired up externally as through-hole components inserted into the breadboard.

Explains the principles of transistor switching circuits, highlighting their role in electronic computers. It contrasts transistors with vacuum tubes, emphasizing that transistors function as ...

For years, the computing industry has been governed by Moore’s Law, which states that the the number of transistors in a semiconductor circuit doubles every two years.

On-device AI A low-power nanoelectronic device that can be implemented directly in wearable electronics enables real-time machine learning classification of medical data inside wearables. (Courtesy: ...

Radiation Sensing Field Effect Transistor (RADFET) is based on the metal oxide silicon p-channel structure. RADFET is an integrating dosimeter that monitors dose of radiation (Gy) as a result of ...