Theodoros Serghiou of the University of Glasgow’s James Watt School of Engineering led the development of the EGOFET. He said ...

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The Japanese AIST Group (consisting of National Institute of Advanced Industrial Science and Technology and AIST Solutions) ...

Displacing GaAs PAs is a long-term goal for Finwave, which has made progress on many fronts since Lesaicherre took charge in ...

APC-E’s initial product launch includes 650V SiC Schottky barrier diodes (SBDs) with low forward voltage to enhance energy savings in power supplies across a wide range of applications. Also included ...

To improve the durability of tin perovskite, a method called Ruddlesden-Popper (RP) has been proposed that introduces large ...

Scientists from the French research organisation CEA-Leti presented three papers at Photonics West 2025 detailing the ...

Nimy Resources, a mining company, has entered into a collaboration with mineral supply chains firm M2i Global to secure a ...

Navitas Semiconductor,. which makes the GaNFast GaN and GeneSiC SiC power semiconductors, has announced that both ...

Tunable lasing at around 405 nm is realised with an InGaN device featuring a narrow-ridge active channel and a periodically ...

Lumentum has announced that Michael Hurlston has been appointed president and CEO and as a director of the company, effective ...

During Q4 2024, KnowMade's SiC Patent Monitor showed 900 new patent families and 400 newly granted patents. This period also ...