Abstract: Edge termination is the key building block in power devices to enable near-ideal, avalanche breakdown voltage (BV). This work presents the design, fabrication, and physics of a GaN guard ...
Abstract: This study presents empirical validation of a simulated novel hybrid edge termination (HET) structure with planar ion implantation processing for vertical gallium nitride (GaN) diodes. The ...
Pick: Ohio State −24.0 — With the market fixed at a key number, the Buckeyes’ vertical edge keeps the favorite live to cover. Moreover, push security at 24 matters; avoid paying past it unless weather ...
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